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Fast Recovery Diodes (FRD) MA2D601 Silicon planar type Unit : mm 15.0 0.5 For high-frequency rectification For Snubber circuit of power supplies For secondary side rectification for a power supply I Features * High reverse voltage VR > 600 V * Short reverse recovery time trr < 50nsec * TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV 9.9 0.3 3.0 0.5 4.6 0.2 2.9 0.2 3.2 0.1 1.5 - 0.4 +0 13.7 0.2 4.2 0.2 2.6 0.1 1.4 0.2 0.8 0.1 0.55 0.15 I Absolute Maximum Ratings Ta = 25C Parameter Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM VRSM IF(AV) IFSM Tj Tstg Rating 600 600 5.0 50 -40 to +150 -40 to +150 Unit V V A A C C 5.08 0.5 2.54 0.3 1 2 1 : Cathode 2 : Anode TO-220D Package (2-pin) Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C 3C Parameter Repetitive peak reverse current Symbol IRRM1 IRRM2 Forward voltage (DC) Reverse recovery time* VF trr Rth(j-c) Rth(j-a) Note) 1. Rated input/output frequency: 10 MHz 2. Tightening torque-max. 8 kg x cm 3. * : trr measuring circuit 50 50 Conditions VRRM = 600 V, TC = 25C VRRM = 600 V, Tj = 150C IF = 5.0 A, TC = 25C IF = 1 A, IR = 1 A Min Typ Max 100 500 1.5 50 3.0 63 Unit A A V ns C/W C/W Thermal resistance trr IF D.U.T 5.5 IR 0.1 x IR 1 MA2D601 IF V F 100 100 Ta = 150C Fast Recovery Diodes (FRD) IR V R 10 1 Reverse current IR (A) Ta = 150C 10 Forward current IF (A) 1 0.1 25C 0.1 0.01 0.001 0.01 25C 0.000 1 0 0.5 1 1.5 2 2.5 0.001 0 100 200 300 400 500 600 Forward voltage VF (V) Reverse voltage VR (V) 2 |
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